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芯片衰減器

非常重要數據

基帶(dai)芯片衰(shuai)(shuai)減(jian)(jian)器,很高250瓦，很高18 GHz，條件衰(shuai)(shuai)減(jian)(jian)器在因(yin)(yin)此(ci)溫(wen)差因(yin)(yin)素(su)下平等(deng)地減(jian)(jian)低RF工率，而溫(wen)差因(yin)(yin)素(su)可變氣(qi)門正時心片設(she)計方案為在常溫(wen)下減(jian)(jian)小或增大其衰(shuai)(shuai)減(jian)(jian)，以(yi)展示數字信(xin)號調平app所必(bi)需的最優反應。塊狀衰(shuai)(shuai)減(jian)(jian)器采用(yong)放小器電(dian)路系統，閱讀器，上/下轉化(hua)成器，相(xiang)位配比陣列和啟閉app。會(hui)按照所必(bi)需的規格型號，需要在帶(dai)著薄或厚(hou)阻值的BeO，氮化(hua)鋁或防氧化(hua)鐵(tie)陶瓷圖片上研制心片。

品牌：MACOM

車輛詳情頁簡單介紹

集成電路芯片衰減器

Model	Power (Watts)	Frequency (GHz)	Ceramic Substrate	Resistor Film	Wrap Options	Finish Option	Width (Inches)	Length (Inches)	Height (Inches)
1KNA250	250	1	AlN	Thin & Thick	G, Tabbed	N, T, H	0.375	0.375	0.040
	100	2.3	AlN	Thin & Thick	G, Tabbed	N, T, H	0.350	0.225	0.040
	150	1.9	AlN	Thin & Thick	G, Tabbed	N, T, H	0.375	0.250	0.040
2KNA250	250	2.3	AlN	Thin & Thick	G, Tabbed	N, T, H	0.500	0.500	0.040
3KNA100	100	3	AlN	Thin	G, Tabbed	N, T, H	0.375	0.250	0.040
	10	4	BeO	Thin	G	N, T, H	0.100	0.200	0.040
	100	0.5	BeO	Thin	G	N, T, H	0.500	0.500	0.40
	20	4	BeO	Thin	G	N, T, H	0.250	0.250	0.040
	50	1	BeO	Thin	G	N, T, H	0.375	0.375	0.040
	1.5	12.4	Alumina	Thin		N, T, H, G	0.125	0.150	0.010
	0.75	18	Alumina	Thin		N, T, H, G	0.060	0.075	0.010
	0.75	8	Alumina	Thin	F	N, T, H, G	0.060	0.075	0.010
	0.75	18	Alumina	Thin	Tabbed	G, T, H	0.060	0.075	0.040
	0.75	18	Alumina	Thin	W	N, T, H, G	0.060	0.075	0.010
	1.5	4	Alumina	Thin	F	N, T, H, G	0.125	0.150	0.010
	1.5	12.4	Alumina	Thin	Tabbed	G, T, H	0.125	0.150	0.040
	1.5	12.4	Alumina	Thin	W	N, T, H, G	0.125	0.150	0.010
	100	0.4	BeO	Thin	G	N, T, H	0.500	0.500	0.040